a,dec,2010 to ? 92 1.emitter 2.base 3.collector jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors MPS651 transistor (npn) features z general purpose amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 80 v collector-emitter breakdown v (br)ceo * i c =10ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 5 v collector cut-off current i cbo v cb =80v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a h fe(1) * v ce =2v, i c =50ma 75 h fe(2) * v ce =2v, i c =500ma 75 h fe(3) * v ce =2v, i c =1a 75 dc current gain h fe(4) * v ce =2v, i c =2a 40 v ce(sat) (1) * i c =2a,i b =200ma 0.5 v collector-emitter saturation voltage v ce(sat) (2) * i c =1a,i b =100ma 0.3 v base-emitter saturation voltage v be(sat) * i c =1a,i b =100ma 1.2 v base-emitter voltage v be * i c =1a, v ce =2v 1 v transition frequency f t v ce =5v,i c =50ma,f=100mhz 75 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150
0 200 400 600 800 1000 0 500 1000 1500 2000 0.1 1 10 10 100 1000 02 04 06 08 0 10 100 1 10 100 1000 100 150 200 250 300 0 25 50 75 100 125 150 0 125 250 375 500 625 750 0.1 1 10 100 1000 200 400 600 800 1000 1 10 100 1000 0 50 100 150 200 02468 0.0 0.5 1.0 1.5 v ce =2v t a =25 t a =100 o c base-emitter voltage v be (mv) collector current i c (ma) i c ?? v be f=1mhz i e =0 / i c =0 t a =25 o c MPS651 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob 50 20 transition frequency f t (mhz) collector current i c (ma) v ce =5v t a =25 o c i c f t ?? 300 2000 v ce = 2v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a 2000 collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =25 t a =100 =10 i c v besat ?? 2000 t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 5.5ma 4.95ma 4.4ma 3.85ma 3.3ma 2.75ma 2.2ma 1.65ma 1.1ma i b =0.55ma collector-emitter voltage v ce (v) collector current i c (a) static characteristic 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,apr,2014
|
